In response to the toxicity and environmental pollution caused by traditional inhibitors in polishing slurry such as benzotriazole (BTA),a Co interconnect rough polishing slurry was prepred using SiO2 as an abrasive and potassium monoalkyl phosphate ester (MAPK) as a new inhibitor in a glycine hydrogen peroxide system.Through polishing and static corrosion experiments,as well as characterization methods such as electrochemistry,photoelectron spectroscopy,and contact angle analysis,the improvement of MAPK on Co surface and the inhibition mechanism of Co in chemical mechanical polishing(CMP) were revealed.The results indicate that MAPK forms a dense passive film on the surface of Co through physical and chemical adsorption,which can effectively inhibit the corrosion of Co and achieve higher removal rates at lower static corrosion rates.The addition of MAPK can improve the wettability of the polishing slurry and significantly improve the surface quality of Co interconnect polishing,resulting in a Co removal rate greater than 500 nm/min,a static corrosion rate less than 1 nm/min,and a surface roughness less than 0.5 nm.